Código parte: DDR3 2G 1600Mhz
128M x 64-bit (2GB) ValueRAM. DDR3-1600 CL11 SDRAM (DRAM síncrona) 2Rx8, memoria módulo, cuatro componentes FBGA de 128 M x 16 bits. SPD programado para la latencia estándar JEDEC DDR3-1600 sincronización de 11-11-11 a 1,5 V. DIMM de 240 pines utiliza contactos dorados.
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow
seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component