Código parte: GP-ASM2NE6100TTTD
- Form Factor: M.2 2280
- Interface: PCI-Express 4.0 x4, NVMe 1.3
- Total Capacity: 1000GB*
- Sequential Read Speed : up to 5000 MB/s**
- Sequential Write speed : up to 4400 MB/s**
- Wear Leveling, Over-Provision technologies
- TRIM & S.M.A.R.T supported
- Fully Body Copper Heat Spreader
- Warranty: Limited 5-years
Inferface
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PCI-Express 4.0 x4, NVMe 1.3
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Form Factor
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M.2 2280
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Total Capacity
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1000GB
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Warranty
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Limited 5-year or 1800TBW
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NAND
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3D TLC Toshiba BiCS4
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External DDR Cache
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DDR4 1GB
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Sequential Read speed
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Up to 5000 MB/s
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Sequential Write speed
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Up to 4400 MB/s
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Random Read IOPS
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Up to 750k
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Random Write IOPS
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Up to 700k
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Dimension
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80.5 x 11.4 x 23.5 mm
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Mean time between failure (MTBF)
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1.77M hours
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Power Consumption (Active)
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Avg. read : 6.6W ; Write : 6.4W
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Power Consumption (Idle)
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18.8mw
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Temperature (Operating)
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0°C to 70°C
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Temperature (Storage)
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-40°C to 85°C
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